## Abstract The noise modeling of microwave FETs based on the noise‐wave representation of a transistor‐intrinsic circuit is considered. Frequency‐dependent noise‐wave temperatures are introduced as empirical model parameters and modeled using neural networks. In this way, online optimization in a
Temperature-dependent models of low-noise microwave transistors based on neural networks
✍ Scribed by Zlatica D. Marinković; Vera V. Marković
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 545 KB
- Volume
- 15
- Category
- Article
- ISSN
- 1096-4290
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✦ Synopsis
Neural networks are proposed for efficient temperature-dependent modeling of small-signal and noise performances of low-noise microwave transistors over a wide temperature range. The proposed models can be based either on neural networks only or on a combination of neural networks and empirical transistor models.
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