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Neural network modeling of microwave FETs based on third-order distortion characterization

✍ Scribed by F. Giannini; P. Colantonio; G. Orengo; A. Serino

Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
539 KB
Volume
16
Category
Article
ISSN
1096-4290

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✦ Synopsis

A new method for characterization of HEMT distortion parameters, which extracts the coefficents of a Taylor series expansion of I ds (V gs , V ds ), including all cross-terms, is developed from low-frequency harmonic measurements. The extracted parameters will be used either in a Volterra series model around a fixed bias point for 3 rd -order characterization of small-signal I ds nonlinearity, or in a large-signal model of I ds characteristic, where its partial derivatives are locally characterized up to the 3 rd order in the whole bias region, using a novel neural-network representation. The two models are verified by one-tone and two-tone intermodulation distortion (IMD) tests on a PHEMT device.

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