𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Bias-dependent scalable modeling of microwave FETs based on artificial neural networks

✍ Scribed by Zlatica D. Marinković; Olivera R. Pronić; Vera V. Marković

Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
299 KB
Volume
48
Category
Article
ISSN
0895-2477

No coin nor oath required. For personal study only.

✦ Synopsis

A simple and efficient procedure for modeling of scattering and noise parameters for a class of microwave transistors manufactured in the same technology is presented in this article. It is based on multilayer perceptron artificial neural networks (ANN), whose inputs are device gate width, biases, and frequency that produce scattering and noise parameters at their outputs. After the ANN training, the scattering and noise parameters' prediction under different operating conditions for any device from the class requires only calculation of the ANN response, without changes in the ANN structure. Numerical examples for S-and noise parameters modeling for one specific series of pHEMT devices are presented to show the validity and effectiveness of this approach.

📜 SIMILAR VOLUMES

Media-dependent color appearance modelin
Media-dependent color appearance modeling based on artificial neural networks
✍ Binghua Chai; Ningfang Liao; Dazun Zhao; Weiping Yang 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 267 KB 👁 1 views

## Abstract In this study, we tried to consider various color appearance factors and device characterization together by visual experiment to simplify the across‐media color appearance reproduction. Two media, CRT display (soft‐copy) and NCS color atlas (hard‐copy), were used in our study. A total

Artificial neural network applications i
Artificial neural network applications in improved noise wave modeling of microwave FETs
✍ Zlatica D. Marinković; Olivera Pronić-Rančić; Vera Marković 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 489 KB

## Abstract An application of artificial neural networks (ANNs) for accuracy improving of the microwave FETs (MESFET/HEMT, dual‐gate MESFET) noise modeling is presented in this paper. The proposed model is based on a basic transistor noise wave model, whose noise wave temperatures are assumed to be

Applications of knowledge-based artifici
Applications of knowledge-based artificial neural network modeling to microwave components
✍ P. M. Watson; K. C. Gupta; R. L. Mahajan 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 197 KB 👁 2 views

This paper expands upon reported methods for utilizing prior knowledge for reducing complexity of input-output relationships that an ANN must learn. Previously, two simple methods, difference method and prior knowledge input method, were demonstrated for new model developments. This paper utilizes k

Noise wave modeling of microwave transis
Noise wave modeling of microwave transistors based on neural networks
✍ Vera Marković; Olivera Pronić; Zlatica Marinković 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 96 KB 👁 1 views

## Abstract The noise modeling of microwave FETs based on the noise‐wave representation of a transistor‐intrinsic circuit is considered. Frequency‐dependent noise‐wave temperatures are introduced as empirical model parameters and modeled using neural networks. In this way, online optimization in a