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SiGe-on-insulator substrate fabricated by low energy oxygen implantation

✍ Scribed by Yukari Ishikawa; T. Saito; N. Shibata; S. Fukatsu


Book ID
114170562
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
334 KB
Volume
147
Category
Article
ISSN
0168-583X

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SiGe-on-insulator material fabrication b
✍ Miao Zhang; Zhenghua An; Chenglu Lin; Paul K. Chu πŸ“‚ Article πŸ“… 2004 πŸ› Elsevier Science 🌐 English βš– 234 KB

Relaxed SiGe-on-insulator (SGOI) is an attractive material to fabricate strained Si structures. Separation-by-implantation-of-oxygen (SIMOX) is a competing method to synthesize SGOI materials. In this work, pseudomorphic SiGe grown directly on Si substrate without any buffer layer SiGe/Si were impla