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Relaxed silicon–germanium-on-insulator fabricated by oxygen implantation and oxidation-enhanced annealing

✍ Scribed by Chen, Zhijun; Zhang, Feng; Chen, Jing; Jin, Bo; Wang, Yongjin; Zhang, Changsheng; Zhang, Zhengxuan; Wang, Xi

Book ID
121354232
Publisher
Institute of Physics
Year
2005
Tongue
English
Weight
411 KB
Volume
20
Category
Article
ISSN
0268-1242

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✍ Miao Zhang; Zhenghua An; Chenglu Lin; Paul K. Chu 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 234 KB

Relaxed SiGe-on-insulator (SGOI) is an attractive material to fabricate strained Si structures. Separation-by-implantation-of-oxygen (SIMOX) is a competing method to synthesize SGOI materials. In this work, pseudomorphic SiGe grown directly on Si substrate without any buffer layer SiGe/Si were impla