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Sharp 1.54 µm luminescence from porous erbium implanted silicon

✍ Scribed by Evans, J.H.; Hamilton, B.; Peaker, A.R.; Gardelis, S.; Taskin, T.


Book ID
120817588
Publisher
The Institution of Electrical Engineers
Year
1995
Tongue
English
Weight
312 KB
Volume
31
Category
Article
ISSN
0013-5194

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1.54 μm photoluminescence of erbium-impl
✍ D. Moutonnet; H. L'Haridon; P.N. Favennec; M. Salvi; M. Gauneau; F. Arnaud D'Avi 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 190 KB

Erbium-implanted silicon layers have been studied both by secondary ion mass spectrometry tSIMS) and by photoluminescence (PL). 7he SIMS analysis shows the erbium redistribution inside the substrate following the rapid thermal annealing and the implantation energy. The PL .spectra present a maximum