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1.54 μm Photoluminescence of Erbium Implanted Hydrogenated Amorphous Silicon

✍ Scribed by Kechouane, M.; Beldi, N.; Mohammed-Brahim, T.; L'Haridon, H.; Salvi, M.; Gauneau, M.

Book ID
118273588
Publisher
Cambridge University Press
Year
1993
Weight
192 KB
Volume
298
Category
Article
ISSN
0272-9172

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1.54 μm photoluminescence of erbium-impl
1.54 μm photoluminescence of erbium-implanted silicon
✍ D. Moutonnet; H. L'Haridon; P.N. Favennec; M. Salvi; M. Gauneau; F. Arnaud D'Avi 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 190 KB

Erbium-implanted silicon layers have been studied both by secondary ion mass spectrometry tSIMS) and by photoluminescence (PL). 7he SIMS analysis shows the erbium redistribution inside the substrate following the rapid thermal annealing and the implantation energy. The PL .spectra present a maximum