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Photoluminescence at 1.54 μm of Er-doped hydrogenated amorphous silicon

✍ Scribed by Mikhail Bresler; Oleg Gusev; Alexey Kuznetsov; Vera Kudoyarova; Evgenii Terukov; Irina Yassievich; Walther Fuhs; Isabell Ulber; Gerhard Weiser


Book ID
117148953
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
82 KB
Volume
227-230
Category
Article
ISSN
0022-3093

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1.54 μm photoluminescence of erbium-impl
✍ D. Moutonnet; H. L'Haridon; P.N. Favennec; M. Salvi; M. Gauneau; F. Arnaud D'Avi 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 190 KB

Erbium-implanted silicon layers have been studied both by secondary ion mass spectrometry tSIMS) and by photoluminescence (PL). 7he SIMS analysis shows the erbium redistribution inside the substrate following the rapid thermal annealing and the implantation energy. The PL .spectra present a maximum