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1.54 μm photoluminescence of erbium-implanted silicon

✍ Scribed by D. Moutonnet; H. L'Haridon; P.N. Favennec; M. Salvi; M. Gauneau; F. Arnaud D'Avitaya; J. Chroboczek

Publisher: Elsevier Science
Year: 1989
Tongue: English
Weight: 190 KB
Volume: 4
Category: Article
ISSN: 0921-5107
DOI: 10.1016/0921-5107(89)90219-5

No coin nor oath required. For personal study only.

✦ Synopsis

Erbium-implanted silicon layers have been studied both by secondary ion mass spectrometry tSIMS) and by photoluminescence (PL). 7he SIMS analysis shows the erbium redistribution inside the substrate following the rapid thermal annealing and the implantation energy. The PL .spectra present a maximum intensity at 1.54 #m corresponding m the Ef + emission. 7[his intensity depends on the implantation close.

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