Erbium-implanted silicon layers have been studied both by secondary ion mass spectrometry tSIMS) and by photoluminescence (PL). 7he SIMS analysis shows the erbium redistribution inside the substrate following the rapid thermal annealing and the implantation energy. The PL .spectra present a maximum
Enhanced 1.54 μm emission of erbium implanted silicon
✍ Scribed by Y.S Tang
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 252 KB
- Volume
- 155
- Category
- Article
- ISSN
- 0375-9601
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