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Origin of the 1.54 μm luminescence of erbium-implanted porous silicon

✍ Scribed by Shin, Jung H.; Hoven, G. N. van den; Polman, A.


Book ID
120072468
Publisher
American Institute of Physics
Year
1995
Tongue
English
Weight
375 KB
Volume
66
Category
Article
ISSN
0003-6951

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1.54 μm photoluminescence of erbium-impl
✍ D. Moutonnet; H. L'Haridon; P.N. Favennec; M. Salvi; M. Gauneau; F. Arnaud D'Avi 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 190 KB

Erbium-implanted silicon layers have been studied both by secondary ion mass spectrometry tSIMS) and by photoluminescence (PL). 7he SIMS analysis shows the erbium redistribution inside the substrate following the rapid thermal annealing and the implantation energy. The PL .spectra present a maximum