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1.54-Î¼m electroluminescence of erbium-doped silicon grown by molecular beam epitaxy

✍ Scribed by Ennen, H.; Pomrenke, G.; Axmann, A.; Eisele, K.; Haydl, W.; Schneider, J.

Book ID: 121382854
Publisher: American Institute of Physics
Year: 1985
Tongue: English
Weight: 420 KB
Volume: 46
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.95639

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