✦ LIBER ✦

Low-threshold-current 1.32-Î¼m GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy

✍ Scribed by Li, Wei; Jouhti, Tomi; Peng, Chang Si; Konttinen, Janne; Laukkanen, Pekka; Pavelescu, Emil-Mihai; Dumitrescu, Mihail; Pessa, Markus

Book ID: 121219414
Publisher: American Institute of Physics
Year: 2001
Tongue: English
Weight: 369 KB
Volume: 79
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1418455

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Room temperature performance of low thre

Room temperature performance of low threshold 1.34-1.44-μm GaInNAs-GaAs quantum-well lasers grown by molecular beam epitaxy

✍ A. Hierro; J.M. Ulloa; E. Calleja; B. Damilano; J. Barjon; J.-Y. Duboz; J. Massi 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 160 KB

Low-threshold 1.3-/spl mu/m InGaAsN:Sb-G

Low-threshold 1.3-/spl mu/m InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy

✍ Yang, X.; Heroux, J.B.; Jurkovic, M.J.; Wang, W.I. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 44 KB

Low threshold InAlGaAsAlGaAs strained qu

Low threshold InAlGaAsAlGaAs strained quantum well lasers grown by molecular beam epitaxy

✍ J.-I Chyi; J.-H Gau; J.-L Shieh; J.-W Pan; Y.-J Chan; J.-W Hong; M.-F Huang 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 166 KB

1.3 µm high indium content (42.5%) GaInN

1.3 µm high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

✍ Zhichuan Niu; Shiyong Zhang; Haiqiao Ni; Donghai Wu; Zhenhong He; Zheng Sun; Qin 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 325 KB

High-quality GaNAsâGaAs quantum wells

High-quality GaNAsâGaAs quantum wells with light emission up to 1.44âÎ¼m grown by molecular-beam epitaxy

✍ Wang, S. M.; Gu, Q. F.; Wei, Y. Q.; Sadeghi, M.; Larsson, A.; Zhao, Q. X.; Wang, 📂 Article 📅 2005 🏛 American Institute of Physics 🌐 English ⚖ 455 KB

Long-wavelength strained-layer InGaAs/Ga

Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy

✍ T. Piwoński; P. Sajewicz; J. M. Kubica; M. Zbroszczyk; K. Regiński; B. Mroziewic 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 117 KB

## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to cri