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High-quality GaNAs∕GaAs quantum wells with light emission up to 1.44 μm grown by molecular-beam epitaxy

✍ Scribed by Wang, S. M.; Gu, Q. F.; Wei, Y. Q.; Sadeghi, M.; Larsson, A.; Zhao, Q. X.; Wang, X. D.; Ma, C. H.; Xing, Z. G.


Book ID
120017666
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
455 KB
Volume
87
Category
Article
ISSN
0003-6951

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