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Low-threshold 1.3-/spl mu/m InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy

โœ Scribed by Yang, X.; Heroux, J.B.; Jurkovic, M.J.; Wang, W.I.


Book ID
119787716
Publisher
IEEE
Year
2000
Tongue
English
Weight
44 KB
Volume
12
Category
Article
ISSN
1041-1135

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## Abstract The operation in the 1020 nm wavelength range of strainedโ€layer InGaAs/GaAs separateโ€confinementโ€heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 ร… thick InGaAs quantum well with an indium content of 25%, which is close to cri