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Shallow junction formation by polyatomic cluster ion implantation

✍ Scribed by D. Takeuchi; N. Shimada; J. Matsuo; I. Yamada


Book ID
114168374
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
412 KB
Volume
121
Category
Article
ISSN
0168-583X

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This paper provides an overview of the current state-of-the-art in the formation of shallow junctions in germanium by ion implantation, covering the issues of dopant activation, diffusion and defect removal. As will be shown, for the case of p + implantations, the application of rapid thermal anneal