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Formation and characterization of shallow junctions by through-film ion implantation in GaAs

✍ Scribed by H.L. Shen; H.L. Xu; G.Q. Xia; S.C. Zou; Z.Y. Zhou; B.Y. Jiang; X.H. Liu

Book ID
113284755
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
281 KB
Volume
80-81
Category
Article
ISSN
0168-583X

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Ion-implantation issues in the formation
Ion-implantation issues in the formation of shallow junctions in germanium
✍ E. Simoen; A. Satta; A. D’Amore; T. Janssens; T. Clarysse; K. Martens; B. De Jae πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 361 KB

This paper provides an overview of the current state-of-the-art in the formation of shallow junctions in germanium by ion implantation, covering the issues of dopant activation, diffusion and defect removal. As will be shown, for the case of p + implantations, the application of rapid thermal anneal