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Sequential ion beam synthesis of buried Si3N4 layers in silicon

✍ Scribed by A.B. Danilin; K.A. Drakin; A.A. Malinin; V.N. Mordkovich; A.F. Petrov; V.V. Saraikin; O.I. Vyletalina

Book ID
113284499
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
536 KB
Volume
83
Category
Article
ISSN
0168-583X

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πŸ“œ SIMILAR VOLUMES

Ion beam synthesis of Si3N4 amorphous bu
Ion beam synthesis of Si3N4 amorphous buried layers
✍ A.I. Belogorokhov; A.B. Danilin; V.N. Mordkovich; O.I. Vyletalina πŸ“‚ Article πŸ“… 1992 πŸ› Elsevier Science 🌐 English βš– 117 KB

It was demonstrated that it is possible to prevent the crystallization of buried Si3N 4 layers formed by N Γ· implantation with E--150 keV, β€’ ---5.0 Γ— 1017 N+cm 2 and TA = 1200 Β°C (2 h). To achieve this, preliminary implantation with E = 150 keV and β€’/> 5.0 x 1016 O + cm 2 has to be carried out. Radi