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Polyenergy ion beam synthesis of buried oxynitride layer in silicon

โœ Scribed by M.Yu. Barabanenkov; Yu.A. Agafonov; V.N. Mordkovich; A.N. Pustovit; A.F. Vyatkin; V.I. Zinenko


Book ID
114164214
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
172 KB
Volume
171
Category
Article
ISSN
0168-583X

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Synthesis of buried silicon oxynitride l
โœ A.D. Yadav; Rucha H. Polji; Vibha Singh; S.K. Dubey; T.K. Gundu Rao ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 252 KB

Silicon oxynitride (Si x O y N z ) buried insulating layers were synthesized by SIMNOX (separation by implanted nitrogen-oxygen) process by 14 N + and 16 O + ion implantation to high fluence levels 1 โ€ข 10 17 , 2.5 โ€ข 10 17 and 5 โ€ข 10 17 ions cm ร€2 sequentially in the ratio 1:1 at 150 keV into p-type