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Peculiarities of buried silicon oxynitride layer synthesis by sequential oxygen and nitrogen ion implantation in silicon

✍ Scribed by A.B. Danilin; K.A. Drakin; V.V. Kukin; A.A. Malinin; V.N. Mordkovich; A.F. Petrov; V.V. Saraykin; O.I. Vyletalina

Book ID: 118400024
Publisher: Elsevier Science
Year: 1991
Tongue: English
Weight: 282 KB
Volume: 58
Category: Article
ISSN: 0168-583X
DOI: 10.1016/0168-583x(91)95586-3

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