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Ion Implanted Buried Si3N4 Layers below Epitaxial NSi2 Layers

✍ Scribed by Danilovich, J. ;Gärtner, K. ;Götz, G. ;Novikov, A. ;Whber, B.

Book ID
105381189
Publisher
John Wiley and Sons
Year
1989
Tongue
English
Weight
322 KB
Volume
112
Category
Article
ISSN
0031-8965

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Ion beam synthesis of Si3N4 amorphous buried layers
✍ A.I. Belogorokhov; A.B. Danilin; V.N. Mordkovich; O.I. Vyletalina 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 117 KB

It was demonstrated that it is possible to prevent the crystallization of buried Si3N 4 layers formed by N ÷ implantation with E--150 keV, • ---5.0 × 1017 N+cm 2 and TA = 1200 °C (2 h). To achieve this, preliminary implantation with E = 150 keV and •/> 5.0 x 1016 O + cm 2 has to be carried out. Radi