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Separation of vacancy and interstitial depth profiles in proton- and boron-implanted silicon

✍ Scribed by P Pellegrino; P Lévêque; H Kortegaard-Nielsen; A Hallén; J Wong-Leung; C Jagadish; B.G Svensson


Book ID
114165160
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
145 KB
Volume
186
Category
Article
ISSN
0168-583X

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