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Defect and dopant depth profiles in boron-implanted silicon studied with channeling and nuclear reaction analysis

✍ Scribed by M. Vos; D.O. Boerma; P.J.M. Smulders; S. Oosterhoff

Book ID: 113277483
Publisher: Elsevier Science
Year: 1986
Tongue: English
Weight: 799 KB
Volume: 17
Category: Article
ISSN: 0168-583X
DOI: 10.1016/0168-583x(86)90062-5

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