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Depth profiling of nitrogen implanted into Si/C and Zr/C bilayers with nuclear reaction analysis

✍ Scribed by Y Miyagawa; S Nakao; L.S Wielunski; H Hasegawa; S Miyagawa


Book ID
114171960
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
260 KB
Volume
161-163
Category
Article
ISSN
0168-583X

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We have measured depth profiles of N isotopes by Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA) before and after implantation of 100 keV N isotopes into Si 3 N 4 films on SiO 2 -glass substrates, which were prepared by using RF-magnetron-reactive-sputtering depositi