We investigate systematically the effects of seed layer thickness on the sensitivity of exchange biased planar Hall sensors. The sensors consist of Ni 80 Fe 20 (t s )/Fe 50 Mn 50 (20 nm)/Ni 80 Fe 20 (20 nm) trilayers deposited on silicon substrates by sputtering, with t s varied from 0 nm to 50 nm.
β¦ LIBER β¦
Sensitivity Dependence of the Planar Hall Effect Sensor on the Free Layer of the Spin-Valve Structure
β Scribed by Hung, T.Q.; Oh, S.J.; Tu, B.D.; Duc, N.H.; Phong, L.V.; AnandaKumar, S.; Jeong, J.-R.; Kim, C.G.
- Book ID
- 114653009
- Publisher
- IEEE
- Year
- 2009
- Tongue
- English
- Weight
- 427 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0018-9464
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