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Effect of seed layer on the sensitivity of exchange biased planar Hall sensor

✍ Scribed by K.M. Chui; A.O. Adeyeye; Mo-Huang Li

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
639 KB
Volume
141
Category
Article
ISSN
0924-4247

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✦ Synopsis

We investigate systematically the effects of seed layer thickness on the sensitivity of exchange biased planar Hall sensors. The sensors consist of Ni 80 Fe 20 (t s )/Fe 50 Mn 50 (20 nm)/Ni 80 Fe 20 (20 nm) trilayers deposited on silicon substrates by sputtering, with t s varied from 0 nm to 50 nm. The sensors are linear near zero-field as a result of the pinning field from the Fe 50 Mn 50 layer. We observed that the sensitivity and range of linearity of the sensors are strongly dependent on the Ni 80 Fe 20 seed layer thickness. The sensitivity of the sensors were also calculated by taking into account the shunting effects of the various metal layers, and the values obtained agree well with the experimental values.

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