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Micromagnetic characterization of a rotation sensor based on the planar Hall effect

โœ Scribed by M. Volmer; J. Neamtu

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
204 KB
Volume
403
Category
Article
ISSN
0921-4526

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โœฆ Synopsis

Thin films of Ni 80 Fe 20 (Permalloy) and structures as Ni 80 Fe 20 /NM/Ni 80 Fe 20 were used to build low cost rotation sensors. The structures were deposited onto oxidized Si wafers. NM denotes Cu or Al 2 O 3 layers. Angular dependencies of the planar Hall effect (PHE) are investigated for different values of the magnetic field strength. A distortion of the angular dependence symmetry with respect to the abscissa axis was observed. This is due to contacts misalignment, hysteretic behaviour of the magnetic material and some coupling effects in the multilayered structure. We performed micromagnetic simulations to discuss the effect of the magnetic field strength on the shape of the angular dependence of PHE. The parameters used for micromagnetic simulations are inspired from the film structure.

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Effect of seed layer on the sensitivity
Effect of seed layer on the sensitivity of exchange biased planar Hall sensor
โœ K.M. Chui; A.O. Adeyeye; Mo-Huang Li ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 639 KB

We investigate systematically the effects of seed layer thickness on the sensitivity of exchange biased planar Hall sensors. The sensors consist of Ni 80 Fe 20 (t s )/Fe 50 Mn 50 (20 nm)/Ni 80 Fe 20 (20 nm) trilayers deposited on silicon substrates by sputtering, with t s varied from 0 nm to 50 nm.