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Self-implantation of Cz-Si: Clustering and annealing of defects

✍ Scribed by D.A. Abdulmalik; P.G. Coleman; I.Y. Al-Qaradawi


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
272 KB
Volume
252
Category
Article
ISSN
0169-4332

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High resolution Laplace deep level transient spectroscopy (LDLTS) has been applied to investigate the annealing behaviour of small cluster defects in n-type Si. The Si was implanted with either Ge or Si, with energies 1500 keV and 850 keV respectively, and doses of 1 β€’ 10 10 cm Γ€2 . The low dose ens