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Self-heating in high-power AlGaN-GaN HFETs

✍ Scribed by Gaska, R.; Osinsky, A.; Yang, J.W.; Shur, M.S.


Book ID
111903964
Publisher
IEEE
Year
1998
Tongue
English
Weight
80 KB
Volume
19
Category
Article
ISSN
0741-3106

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## Abstract We developed new ohmic electrodes combined with an Al‐silicide and a molybdenum for AlGaN/GaN HFETs to realize a high power switching application. As a result, the maximum drain current of the HFET was over 55 A and the breakdown voltage was about 800 V. The specific on‐state resistance