## Abstract A novel timeβresolved microβRaman thermography technique has been developed to measure the active region temperature in AlGaN/GaN electronic devices, achieving a temporal and spatial resolution of 200 ns and 0.5β0.7 ΞΌm, respectively. AlGaN/GaN heterostructure field effect transistors (H
β¦ LIBER β¦
Thermal analysis of AlGaN-GaN power HFETs
β Scribed by Nuttinck, S.; Wagner, B.K.; Banerjee, B.; Venkataraman, S.; Gebara, E.; Laskar, J.; Harris, H.M.
- Book ID
- 114659881
- Publisher
- IEEE
- Year
- 2003
- Tongue
- English
- Weight
- 446 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0018-9480
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## Abstract We developed new ohmic electrodes combined with an Alβsilicide and a molybdenum for AlGaN/GaN HFETs to realize a high power switching application. As a result, the maximum drain current of the HFET was over 55 A and the breakdown voltage was about 800 V. The specific onβstate resistance