Time-resolved nanosecond sub-micron resolution thermal analysis of high-power AlGaN/GaN HFETs

✍ Scribed by Kuball, M. ;Riedel, G. J. ;Pomeroy, J. W. ;Sarua, A. ;Uren, M. J. ;Martin, T. ;Hilton, K. P. ;Wallis, D. J.

• Book ID: 105364237
• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 142 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200674717

✦ Synopsis

Abstract

A novel time‐resolved micro‐Raman thermography technique has been developed to measure the active region temperature in AlGaN/GaN electronic devices, achieving a temporal and spatial resolution of 200 ns and 0.5–0.7 μm, respectively. AlGaN/GaN heterostructure field effect transistors (HFETs) grown on SiC and sapphire substrates are compared. Rapid temperature changes within 200 ns of current changes are followed by a slower change in device temperature. For a device on a SiC substrate an approximate temperature plateau is reached within 1–2 μs after switching the device on or off, illustrating its fast thermal response. This is in contrast to the slower time constant of devices on sapphire substrates where μs‐separated electrical pulses do not allow the devices to cool to room temperature between the electrical pulses. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)