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High-power recessed-gate AlGaN-GaN HFET with a field-modulating plate

✍ Scribed by Okamoto, Y.; Ando, Y.; Nakayama, T.; Hataya, K.; Miyamoto, H.; Inoue, T.; Senda, M.; Hirata, K.; Kosaki, M.; Shibata, N.; Kuzuhara, M.

No coin nor oath required. For personal study only.

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