A high-power RF switch IC using AlGaN/GaN HFETs with single-stage configuration

✍ Scribed by Ishida, H.; Hirose, Y.; Murata, T.; Ikeda, Y.; Matsuno, T.; Inoue, K.; Uemoto, Y.; Tanaka, T.; Egawa, T.; Ueda, D.

• Book ID: 114617893
• Publisher: IEEE
• Year: 2005
• Tongue: English
• Weight: 883 KB
• Volume: 52
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2005.851835