Improved power performance for a recessed-gate AlGaN-GaN heterojunction FET with a field-modulating plate

✍ Scribed by Okamoto, Y.; Ando, Y.; Hataya, K.; Nakayama, T.; Miyamoto, H.; Inoue, T.; Senda, M.; Hirata, K.; Kosaki, M.; Shibata, N.; Kuzuhara, M.

• Book ID: 114660121
• Publisher: IEEE
• Year: 2004
• Tongue: English
• Weight: 585 KB
• Volume: 52
• Category: Article
• ISSN: 0018-9480
• DOI: 10.1109/tmtt.2004.837159