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Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors

โœ Scribed by Saidi, I.; Gassoumi, M.; Maaref, H.; Mejri, H.; Gaquiere, C.


Book ID
118743082
Publisher
American Institute of Physics
Year
2009
Tongue
English
Weight
468 KB
Volume
106
Category
Article
ISSN
0021-8979

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Effect of buffer thickness on DC and mic
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## Abstract The authors compared DC and microwave performance of AlGaN/GaN heterojunction fieldโ€effect transistors (HFETs) fabricated on epitaxial structures with different thickness of GaN buffer layer. The structures were grown by lowโ€pressure metalโ€organic vapour phase epitaxy on semiโ€insulating