Selective vapor phase etching of SiGe by HCl in a RPCVD reactor

✍ Scribed by Yuji Yamamoto; Klaus Köpke; Rainer Kurps; Bernd Tillack

• Book ID: 104002367
• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 378 KB
• Volume: 254
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2008.02.121

✦ Synopsis

Fig. 5. Optical microscope image of the sample with line and space after HCl etching at 650 8C for 960 s. [1 1 0] and [1 0 0] direction are written with arrows in (a) and (b), respectively. Positions of initial sidewall and etchfront of SiGe with 30% Ge content are also indicated with arrows.