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Selective vapor phase etching of SiGe versus Si by HCl

✍ Scribed by Yuji Yamamoto; Klaus Köpke; Bernd Tillack

Book ID
108290192
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
267 KB
Volume
517
Category
Article
ISSN
0040-6090

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📜 SIMILAR VOLUMES

Selective vapor phase etching of SiGe by
Selective vapor phase etching of SiGe by HCl in a RPCVD reactor
✍ Yuji Yamamoto; Klaus Köpke; Rainer Kurps; Bernd Tillack 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 378 KB

Fig. 5. Optical microscope image of the sample with line and space after HCl etching at 650 8C for 960 s. [1 1 0] and [1 0 0] direction are written with arrows in (a) and (b), respectively. Positions of initial sidewall and etchfront of SiGe with 30% Ge content are also indicated with arrows.