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Selective etching of Si1 − xGex versus Si with gaseous HCl for the formation of advanced CMOS devices

✍ Scribed by Nicolas Loubet; Thomas Kormann; Guillaume Chabanne; Stéphane Denorme; Didier Dutartre

No coin nor oath required. For personal study only.

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Low temperature (~ 250 °C) lay

✍ Jong-Hyeok Park; Masashi Kurosawa; Naoyuki Kawabata; Masanobu Miyao; Taizoh Sado 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 554 KB

Selective etching of Si1&#xa0;−&#xa0;xGex versus Si with gaseous HCl for the formation of advanced CMOS devices