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Low temperature (~ 250 °C) layer exchange crystallization of Si1 − xGex (x = 1–0) on insulator for advanced flexible devices

✍ Scribed by Jong-Hyeok Park; Masashi Kurosawa; Naoyuki Kawabata; Masanobu Miyao; Taizoh Sadoh

No coin nor oath required. For personal study only.

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Low temperature (~&#xa0;250&#xa0;°C) layer exchange crystallization of Si1&#xa0;−&#xa0;xGex (x&#xa0;=&#xa0;1–0) on insulator for advanced flexible devices