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InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy

โœ Scribed by J. N. Shapiro; A. Lin; P. S. Wong; A. C. Scofield; C. Tu; P. N. Senanayake; G. Mariani; B. L. Liang; D. L. Huffaker


Book ID
121810412
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
795 KB
Volume
97
Category
Article
ISSN
0003-6951

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## Abstract Selective area metalโ€organic vapor phase epitaxy (SAโ€MOVPE) allows inโ€plane control of layer composition and thickness. The use of relatively wide (>10โ€‰ยตm) selective masks brings about large wavelength modulation, taking advantage of vaporโ€phase diffusion of precursors. The wide masks,