Selectivity enhancement by hydrogen addition in selective area metal-organic vapor phase epitaxy of GaN and InGaN

✍ Scribed by Shioda, Tomonari ;Sugiyama, Masakazu ;Shimogaki, Yukihiro ;Nakano, Yoshiaki

• Book ID: 105365825
• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 407 KB
• Volume: 207
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200983606

✦ Synopsis

Abstract

Selective area metal‐organic vapor phase epitaxy (SA‐MOVPE) allows in‐plane control of layer composition and thickness. The use of relatively wide (>10 µm) selective masks brings about large wavelength modulation, taking advantage of vapor‐phase diffusion of precursors. The wide masks, however, tend to induce nucleation on them, leading to much reduced and uncontrollable wavelength modulation. To obtain deposition selectivity between masks and crystal surface, hydrogen addition was proved to be effective by preventing GaN nucleation on masks. Consequently, the maximum growth rate enhancement of 4.8 and the photoluminescence peak shift of 54 nm (nominally 11% shift in the indium composition) were achieved for InGaN bulk layer.