Features of GaN growth attained by metal-organic vapor-phase epitaxy in a low-pressure reactor

✍ Scribed by O. I. Khrykin; A. V. Butin; D. M. Gaponova; V. M. Danil’tsev; M. N. Drozdov; Yu. N. Drozdov; A. V. Murel; V. I. Shashkin

• Book ID: 110140902
• Publisher: Springer
• Year: 2005
• Tongue: English
• Weight: 53 KB
• Volume: 39
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/1.1852635