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Selective chemical vapor deposition of copper using (hfac) copper(I) vinyltrimethylsilane in the absence and presence of water

โœ Scribed by A. Jain; A.V. Gelatos; T.T. Kodas; M.J. Hampden-Smith; R. Marsh; C.J. Mogab


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
988 KB
Volume
262
Category
Article
ISSN
0040-6090

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Lengthening and thickening of multi-wall
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Multi-walled carbon nanotube (MWCNT) array growth demonstrates lengthening and thickening stages by chemical vapor deposition (CVD) in the presence (water-assisted CVD (WACVD)) and absence (conventional CVD (CCVD)) of water. In the lengthening stage of WACVD, CNT wall number remains constant and cat