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Segregation of phosphorus to SiO2/Si(001) interfaces

✍ Scribed by J Da̧browski; H.-J Müssig; R Baierle; M.J Caldas; V Zavodinsky


Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
286 KB
Volume
3
Category
Article
ISSN
1369-8001

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Segregation of Ca in Si has been studied using SIMS and RBS. Pronounced Ca profile broadening is observed during SIMS measurements with oxygen ions under bombardment conditions, yielding the formation of a stoichiometric oxide layer at the surface. Additional profiling through the SiO 2 /Si interfac