Segregation of antimony to Si/SiO2 interfaces
β Scribed by C. Steen; P. Pichler; H. Ryssel
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 276 KB
- Volume
- 154-155
- Category
- Article
- ISSN
- 0921-5107
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π SIMILAR VOLUMES
Segregation of Ca in Si has been studied using SIMS and RBS. Pronounced Ca profile broadening is observed during SIMS measurements with oxygen ions under bombardment conditions, yielding the formation of a stoichiometric oxide layer at the surface. Additional profiling through the SiO 2 /Si interfac
Si-rich-SiO 2 layers with excess silicon of 45-50% were grown by RF magnetron co-sputtering from pure SiO 2 and Si targets and were studied by Raman scattering, HRTEM, electron-paramagnetic resonance and X-ray diffraction (XRD) methods as well as by photo-voltage technique operated at different temp