✦ LIBER ✦

Morphology of Si-SiO2 interface

✍ Scribed by Takuo Sugano; Jen Jon Chen; Toshihisa Hamano

Publisher: Elsevier Science
Year: 1980
Weight: 66 KB
Volume: 98
Category: Article
ISSN: 0167-2584
DOI: 10.1016/0167-2584(80)90618-0

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Interface states at the SiO2-Si interfac

Interface states at the SiO2-Si interface

✍ M. Schulz 📂 Article 📅 1983 🏛 Elsevier Science ⚖ 48 KB

The doped Si/SiO2 interface

✍ J. Snel 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 476 KB

Interface states in SiSiO2 interfaces

✍ H. Deuling; E. Klausmann; A. Goetzberger 📂 Article 📅 1972 🏛 Elsevier Science 🌐 English ⚖ 771 KB

Atomistic simulation of Si/SiO2 interfac

Atomistic simulation of Si/SiO2 interfaces

✍ R.M. Van Ginhoven; H.P. Hjalmarson 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 578 KB

RuO2/SiO2/Si and SiO2/porous Si/Si inter

RuO2/SiO2/Si and SiO2/porous Si/Si interfaces analysed by SIMS

✍ Michał Ćwil; Piotr Konarski; Michał Pająk; Tomasz Bieniek; Andrzej Kosiński; Krz 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 350 KB

The peculiarities of Si/SiO2 interfaces

The peculiarities of Si/SiO2 interfaces in the Si–SiO2 systems with Si nanocrystals

✍ T. Kryshtab; G. Gómez Gasga; N. Korsunska; M. Baran; S. Kirillova; L. Khomenkova 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 281 KB

Si-rich-SiO 2 layers with excess silicon of 45-50% were grown by RF magnetron co-sputtering from pure SiO 2 and Si targets and were studied by Raman scattering, HRTEM, electron-paramagnetic resonance and X-ray diffraction (XRD) methods as well as by photo-voltage technique operated at different temp