𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode

✍ Scribed by Shiyang Zhu; Yu, H.Y.; Whang, S.J.; Chen, J.H.; Chen Shen; Chunxiang Zhu; Lee, S.J.; Li, M.F.; Chan, D.S.H.; Yoo, W.J.; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.

Book ID
111916225
Publisher
IEEE
Year
2004
Tongue
English
Weight
214 KB
Volume
25
Category
Article
ISSN
0741-3106

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Schottky barrier SOI-MOSFETs with high-k
Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dielectrics
✍ C. Henkel; S. Abermann; O. Bethge; G. Pozzovivo; P. Klang; M. StΓΆger-Pollach; E. πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 725 KB

Schottky barrier SOI-MOSFETs incorporating a La(2)O(3)/ZrO(2) high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor tris(N,N'-diisopropylformamidinato) lanthanum is used. As a mid-gap metal gate electrode TiN capped with W is applied. Processing parameter