𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A 2D analytical model for SCEs in MOSFETs with high- k gate dielectric

✍ Scribed by Xie, Qian; Xu, Jun; Ren, Tianling; Taur, Yuan

Book ID
117997178
Publisher
Institute of Physics
Year
2010
Tongue
English
Weight
397 KB
Volume
25
Category
Article
ISSN
0268-1242

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

A fringing-capacitance model for deep-su
A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric
✍ F. Ji; J.P. Xu; P.T. Lai; J.G. Guan πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 189 KB

An analytical model of fringing capacitances for deep-submicron MOSFET with high-k gate dielectric, including gate dielectric fringing-capacitance and gate electrode fringing-capacitance, is obtained by the conformal-mapping transformation method. It is demonstrated that the fringing-capacitance eff