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A new grounded lamination gate (GLG) for diminished fringe-capacitance effects in high-/spl kappa/ gate-dielectric MOSFETs

✍ Scribed by Kumar, M.J.; Venkataraman, V.; Gupta, S.K.


Book ID
114618437
Publisher
IEEE
Year
2006
Tongue
English
Weight
433 KB
Volume
53
Category
Article
ISSN
0018-9383

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