Scalable GaInP/GaAs HBT large-signal model
β Scribed by Rudolph, M.; Doerner, R.; Beilenhoff, K.; Heymann, P.
- Book ID
- 114553926
- Publisher
- IEEE
- Year
- 2000
- Tongue
- English
- Weight
- 199 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0018-9480
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract A compact physicsβbased transitβtime model is established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transitβtime frequency versus bias (__I__~__C__~, __V__~__CE__~), especially at lowβ and mediumβcurrent regimes. Starting with the HICUM model, we introduce a ne
An accurate and broadband method for heterojunction bipolar transistors (HBTs) small-signal model parameters is presented in this article. This method differs from previous ones by extracting the equivalent-circuit parameters without using a special test structure or global numerical optimization te